4.6 Article

Performance Optimization of ZnO Nanorods ETL Based Hybrid Perovskite Solar Cells With Different Seed Layers

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 5, Pages 2494-2499

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3162552

Keywords

Zinc oxide; II-VI semiconductor materials; Perovskites; Substrates; Zinc; X-ray scattering; Surface morphology; Perovskite; solar cell (SC); solvothermal process; ZnO nanorods (ZNRs); ZnO seed layer

Funding

  1. Science and Engineering Research Board (SERB), Department of Science and Technology (DST) [EEQ/2021/000296, EEQ/2020/000183, SRG/2020/000461]
  2. Ministry of Electronics and Information Technology (MeitY) through the Government of India

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This article discusses the direct effect of the seed layers on the growth of ZnO nanorods and the photovoltaic parameters of hybrid perovskite solar cells. Different types of ZnO seed layers were prepared and analyzed, and it was found that the seed layer based on ZnO quantum dots showed the best alignment, vertical arrangement, and uniform distribution of ZnO nanorods, leading to improved performance of the solar cells.
This article discusses the direct effect of the seed layers on the growth of the ZnO nanorods (ZNRs) and related photovoltaic parameters of the hybrid perovskite solar cell (PSC). Four different types of ZnO seed layer samples are prepared to analyze the growth of ZNRs over the respective seed layers. Various device parameters for the respective PSCs made of different seed layers are investigated. The ZnO quantum dot-based seed layer shows the well-aligned, vertical, and uniform distribution of ZNRs and improves SC parameters over the other three samples. The ZnO seed layer deposited via drop cast methods results in less density, random, and nonuniform distribution of the ZNRs. The surface morphology, optical absorption, transmission, and crystalline structure were analyzed with high resolution scanning electron microscopy (HRSEM), TEM, UV-visible absorption, and X-ray diffraction (XRD) techniques. 10.69% of power conversion efficiency with improved open-circuit voltage ( $V_{OC}$ ) of 1.01 V is achieved for device structure, fluorine doped tin oxide (FTO)/ZnO QDs seed layer/ZNRs/perovskite/poly[bis(4-phenyl)(2,5,6-trimethylphenyl)amine (PTAA)/gold (Au).

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