MoS2 Nanoribbon Transistor for Logic Electronics

Tailoring MoS2 into nanoribbon (NR) provides an efficient regulation of the electrical property. Herein, high-performance MoS2 transistors are fabricated by optimizing the channel height, width, and length. The electrical performance of the device is improved due to enhanced gate modulation capability from the quasi-3D channel geometry. The devices obtain a high ON-state current of 496 mu A . mu m(-1) while offering appropriate field-effect mobility of 52.6 cm(2)V(-1)s(-1) as the height and width of MoS2 NR are fixed to 20 +/- 3 nm and 130 +/- 10 nm, respectively. The high performance and desirable current saturation are promising to construct robust logic gates. The NOT and NAND gates are assembled based on an individual MoS2 NR. The inverters demonstrate a voltagegain of -17.8 and a total noise margin of nearly 75%. This work provides an alternative strategy to fully take the advantage of 2-D materials in logic electronics circuits.

Automated summary

Tailoring MoS2 into nanoribbon shape allows efficient regulation of electrical properties and fabrication of high-performance transistors. The quasi-3D channel geometry enhances gate modulation capability and improves device electrical performance. The constructed logic gates based on this structure demonstrate robust logic circuits.