Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 6, Pages 3367-3372Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3169120
Keywords
AlGaN/GaN high electron mobility transistor (HEMT); copper ion (Cu2+); L-cysteine; sensor
Funding
- National Natural Science Foundation of China [61974056, 62174016, 62074019, 62104084]
- Key Research and Development Program of Jiangsu Province [BE2020756]
- Natural Science Foundation of Jiangsu Province [BK20190576]
- Fundamental Research Funds for Central Universities [JUSRP22032]
- Suzhou Science and Technology Project [SZS2020313]
- Science and Technology Development Foundation of Wuxi [N20191002]
- Postgraduate Research and Practice Innovation Program of Jiangsu Province [KYCY20_1769]
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This study demonstrates a copper ion sensor based on Al0.18Ga0.82N/GaN high electron mobility transistor (HEMT) with L-cysteine functionalization. The sensor shows a high sensitivity of 82.22 mu A/(mg/L) and a detection limit of 0.01 mg/L, making it a promising approach for efficient and fast detection of Cu2+.
We demonstrate an Al0.18Ga0.82N/GaN high electron mobility transistor (HEMT)-based copper ion (Cu2+) sensor with L-cysteine functionalization. The sensing response of the sensor was analyzed by measuring the change in drain current of the HEMT after employing Cu2+ ions of different concentrations in the range of 0-20 mg/L forming complexes with L-cysteine. The Al0.18Ga0.82N/GaN HEMT sensor exhibits high response with a sensitivity of 82.22 mu A/(mg/L) and a detection limit of 0.01 mg/L. As a result, the Al0.18Ga0.82N/GaN HEMT sensor functionalized with L-cysteine provides a promising approach for efficient, fast, and convenient detection of Cu2+.
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