4.5 Article

Femtosecond Mode-Locked Yb:KYW Laser Based on InP Nanowire Saturable Absorber

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 34, Issue 5, Pages 247-250

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2022.3144498

Keywords

Indium phosphide; III-V semiconductor materials; Laser mode locking; Measurement by laser beam; Ultrafast optics; Crystals; Pump lasers; InP NWs; mode-locked laser; solid-state lasers

Funding

  1. National Research Foundation of China [61975095, 61975097, 62105182]
  2. Youth Cross Innovation Group of Shandong University [2020QNQT]
  3. Shandong University
  4. Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology [SKL2020KF05]
  5. China Postdoctoral Science Foundation [2021M691954]
  6. Aalto University Doctoral School
  7. Walter Ahlstrom Foundation
  8. Elektroniikkainsinoorien Saatio
  9. Sahkoinsinooriliiton Saatio
  10. Nokia Foundation
  11. Finnish Foundation for Technology Promotion (Tekniikan Edistamissaatio)
  12. Waldemar von Frenckell's Foundation
  13. KansallisOsake-Pankki Fund
  14. EU [H2020-MSCA-RISE-872049]

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In this study, indium phosphide nanowires were fabricated and used as a saturable absorber in a continuous-wave mode-locked femtosecond laser. The results demonstrate that indium phosphide nanowires can generate femtosecond pulses in solid-state lasers, making them a promising candidate for ultrafast photonic devices.
In this letter, indium phosphide (InP) nanowires (NWs) are fabricated by Au-nanoparticle assisted vapor-liquid-solid method and applied as a saturable absorber (SA) for continuous-wave (CW) mode-locked femtosecond Yb:KYW bulk laser. I-scan method was used to characterize the saturable absorption properties of the prepared InP NWs SA. Pulses as short as 394 fs with the repetition rate of 41.5 MHz and maximum average output power of 315 mW are achieved. To the best of our knowledge, this is the first demonstration of InP NWs working as SA for the fs-pulse generation in the solid-state bulk laser. The results indicate that InP NWs are a promising SA candidate for applications in ultrafast photonic devices.

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