4.7 Article

Demonstration of a High-Efficiency Short-Cavity III-V-on-Si C-Band DFB Laser Diode

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2021.3122552

Keywords

Silicon; Waveguide lasers; Optical device fabrication; Optical fibers; Distributed feedback devices; C-band; Gratings; Heterogeneous integration; direct modulation; distributed feedback lasers; wall-plug efficiency

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This paper demonstrates the high wall-plug efficiency and low threshold current of heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. A wall plug efficiency of over 12% is achieved for a 200 μm long DFB laser diode at 25 degrees C, with up to two times 6 mW of optical power coupled into the silicon waveguide and a side-mode suppression ratio of more than 40 dB. The paper also discusses the non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.
In this paper we demonstrate a high wall-plug efficiency and low threshold current for heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. Above 12% wall plug efficiency is achieved for a 200 mu m long DFB laser diode at 25 degrees C. Up to two times 6 mW of optical power is coupled into the silicon waveguide and more than 40 dB side-mode suppression ratio is obtained. We also discuss the non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.

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