Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate

We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire substrates with the same epilayer structure. Subsequently, electrical characteristics of both photodetectors on AlN substrate and Sapphire are compared. A reduction of 4 orders of magnitude of dark current density is reported in UV detectors grown on AlN substrate with respect to Sapphire substrate.

Automated summary

This study reports high-quality, low dark current AlGaN/AlN photodetectors in deep ultraviolet range grown on AlN substrates. A comparison of electrical characteristics between photodetectors on AlN and Sapphire substrates reveals a reduction of four orders of magnitude in dark current density for AlN-based UV detectors.