Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 5, Pages 729-732Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3160514
Keywords
a-IGZO; self-aligned top-gate; high-kappa dielectric; ALD; ultrathin AlOx; equivalent oxide thickness; low operation voltage; bias stability
Categories
Funding
- Shenzhen Municipal Scientific Program [JCYJ20180504165449640, SGDX2019091810 5001787, XMHT20190201013, SGDX20201103095610029]
- International Atomic Energy Agency (IAEA) under CRP [F11020, 21063]
- Shenzhen TFT
- Advanced Display Laboratory
Ask authors/readers for more resources
Investigation of the electrical characteristics of self-aligned top-gate amorphous InGaZnO thin-film transistors reveals high-performance metrics and excellent stability. The transistors exhibit near-ideal subthreshold swing, low off-state current, positive threshold voltage, and decent mobility.
Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlOx gate insulator (GI) are investigated. It is demonstrated that the SATG a-IGZO TFTs present high-performance metrics including a near-ideal subthreshold swing (SS) of 60.9 mV/dec, a low off-state current below 10(-12) A, a positive V-th of 0.1 V, and a decent mobility of 14.1 cm(2)/V . s. In addition, the TFTs exhibit negligible V-th shifts less than 0.02 V against electrical bias stresses. Both high performance and excellent stability are thus simultaneously achieved for the ultrathin GI of amorphous oxide semiconductor (AOS) TFTs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available