Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 6, Pages 902-905Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3167692
Keywords
Charge-coupled device (CCD); graphene; X-ray; broadband
Categories
Funding
- NSFC [61874094, 92164106, 62090030, 62090034]
- Fundamental Research Funds for the Central Universities [K20200060, 2021FZZX001-17]
- Zhejiang University (ZJU) Micro-Nano Fabrication Center
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We report a broadband graphene-silicon field-effect coupled detector (FCD) capable of detecting photons from soft X-ray to Near-Infrared range. The FCD integrates photo-sensing, charge integration, field-effect amplification, and random readout in one pixel, resulting in a highly sensitive broadband response.
Here, we report a broadband graphene-silicon field-effect coupled detector (FCD) sensitive to photons spanning from soft X-ray to Near-Infrared region. Unlike traditional charge-coupled devices (CCD) relying on serial charge transfer between potential wells, the FCD integrates photo-sensing, charge integration, field-effect amplification, and random readout in one pixel. The charge integration in the potential well of the semiconductor substrate and field-effect coupled amplification in graphene transistor result in a highly sensitive broadband response. In the X-ray region, the device displays a high sensitivity of 1088 CGy(air) (-1) cm(-2) and a fast response time < similar to 5 ms. Linear array imaging reveals the potential of our devices for array-based broadband imaging. Our FCD offers a viable strategy to monolithically integrate 2D materials into conventional solid-state imaging technology, exploring the next-generation broadband photodetectors for high-quality imaging and super vision technology.
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