4.6 Article

Backgated Graphene varactors With Quality Factor-Frequency Product Above 300 GHz

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 5, Pages 820-823

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3159491

Keywords

Graphene; varactors; quantum capacitance; RF

Funding

  1. National Science Foundation (NSF) [ECCS-1708275]
  2. NSF through the National Nanotechnology Coordinated Infrastructure (NNCI) [ECCS-2025124]

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This study demonstrates back-gated, multifinger graphene RF varactors with a de-embedded quality factor frequency product, Qx f, above 300 GHz. The effects of different design parameters on tuning ratio and quality factor at 77 K and room temperature are explored at frequencies between 1 MHz and 18 GHz. Small signal equivalent circuit modeling is performed to further explain the impact of design parameters on RF performance. These results hold promise for future integration of graphene varactors in high-speed analog applications.
Back-gated, multifinger graphene RF varactors with a de-embedded quality factor frequency product, Qx f, above 300 GHz are demonstrated. The effect of different design parameters on the tuning ratio and quality factor at 77 K and room temperature are explored at frequencies between 1 MHz and 18 GHz. The best device has Q of 18.4 at 18 GHz. We also perform small signal equivalent circuit modeling on different designs to further explain the effect of design parameters on the RF performance. These results are promising for future integration of graphene varactors in high-speed analog applications.

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