Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 mu m InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

Automated summary

This paper discusses the reflection sensitivity of a 1.3 μm InAs/GaAs quantum dot laser grown on silicon under direct modulation operation. The quantum dot laser demonstrates high tolerance to back reflections with low error transmission at 6 Gbps. This study opens up opportunities for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.