Journal
JETP LETTERS
Volume 103, Issue 11, Pages 692-698Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0021364016110023
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Funding
- Government of the Russian Federation [02.A03.21.0006, 211]
- Russian Foundation for Basic Research [16-32-60015, 16-02-00242, 16-29-03034, 14-02-00033]
- Russian Science Foundation [14-22-00143]
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The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecular-beam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the typeI and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect XXY valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect X valley of the conduction band of the AlAs matrix.
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