Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic opto-electronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM). Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

Automated summary

This article describes the successful conversion of ultrathin PbI2/MoS2 into CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing and demonstrates the high-quality of the converted materials. The quenching of photoluminescence intensity of both MoS2 and CH3NH3PbI3 in CH3NH3PbI3/MoS2 suggests a Type-II energy level alignment at the interface. Temperature-dependent photoluminescence measurements reveal an opposite trend of emission peak position shift between CH3NH3PbI3 and MoS2, which can be attributed to the thermal expansion and electron-phonon coupling effects. These findings highlight the potential importance of CH3NH3PbI3/TMDC heterostructures in optoelectronic applications.