Related references
Note: Only part of the references are listed.Glassy magnetic ground state in layered compound MnSb2Te4
Hao Li et al.
SCIENCE CHINA-MATERIALS (2022)
Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4and MnBi4Te7by Defect Engineering and Chemical Doping
Mao-Hua Du et al.
ADVANCED FUNCTIONAL MATERIALS (2021)
High-temperature quantum anomalous Hall regime in a MnBi2Te4/Bi2Te3superlattice
Haiming Deng et al.
NATURE PHYSICS (2021)
Site Mixing for Engineering Magnetic Topological Insulators
Yaohua Liu et al.
PHYSICAL REVIEW X (2021)
Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi2Te4
Chi Xuan Trang et al.
ACS NANO (2021)
Mn-Rich MnSb2Te4: A Topological Insulator with Magnetic Gap Closing at High Curie Temperatures of 45-50 K
Stefan Wimmer et al.
ADVANCED MATERIALS (2021)
Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
Yi-Fan Zhao et al.
NANO LETTERS (2021)
Evolution of magnetic interactions in Sb-substituted MnBi2Te4
S. X. M. Riberolles et al.
PHYSICAL REVIEW B (2021)
Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4
Yujun Deng et al.
SCIENCE (2020)
Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111)
P. Kagerer et al.
JOURNAL OF APPLIED PHYSICS (2020)
Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone
T. Hirahara et al.
NATURE COMMUNICATIONS (2020)
Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism
Jason Lapano et al.
PHYSICAL REVIEW MATERIALS (2020)
Experimental Realization of an Intrinsic Magnetic Topological Insulator
Yan Gong et al.
CHINESE PHYSICS LETTERS (2019)
Large magnetic gap at the Dirac point in Bi2Te3/MnBi2Te4 heterostructures
E. D. L. Rienks et al.
NATURE (2019)
Realization of interlayer ferromagnetic interaction in MnSb2Te4 toward the magnetic Weyl semimetal state
Taito Murakami et al.
PHYSICAL REVIEW B (2019)
Enhancing the Quantum Anomalous Hall Effect by Magnetic Codoping in a Topological Insulator
Yunbo Ou et al.
ADVANCED MATERIALS (2018)
Large-Gap Magnetic Topological Heterostructure Formed by Subsurface Incorporation of a Ferromagnetic Layer
Toru Hirahara et al.
NANO LETTERS (2017)
Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures
Joseph A. Hagmann et al.
NEW JOURNAL OF PHYSICS (2017)
Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
M. Mogi et al.
APPLIED PHYSICS LETTERS (2015)
Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
J. G. Checkelsky et al.
NATURE PHYSICS (2014)
Thin Films of Magnetically Doped Topological Insulator with Carrier-Independent Long-Range Ferromagnetic Order
Cui-Zu Chang et al.
ADVANCED MATERIALS (2013)
Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
X. Guo et al.
APPLIED PHYSICS LETTERS (2013)
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
Cui-Zu Chang et al.
SCIENCE (2013)
Thickness-Independent Transport Channels in Topological Insulator Bi2Se3 Thin Films
Namrata Bansal et al.
PHYSICAL REVIEW LETTERS (2012)
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
Namrata Bansal et al.
THIN SOLID FILMS (2011)
Quantized Anomalous Hall Effect in Magnetic Topological Insulators
Rui Yu et al.
SCIENCE (2010)
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
ME Vickers et al.
JOURNAL OF APPLIED PHYSICS (2003)