Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.56.01AA01
Keywords
-
Categories
Funding
- Ministry of General Affairs and Communications
- Japan Society for the Promotion of Science (JSPS) [24360124, 15H03977]
- Mazda Foundation
- Kyushu Bureau of Economy, Trade, and Industry
- Research Institute for Applied Mechanics, Kyushu University
Ask authors/readers for more resources
Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO2 molecules on a H-diamond surface. The activation energy of hole concentration in NO2/H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al2O3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO2 hole-doping and Al2O3-passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al2O3/NO2/H- diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poisson's equations. (C) 2017 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available