Journal
CHINESE PHYSICS B
Volume 31, Issue 8, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1674-1056/ac5c3b
Keywords
MoSi2N4; Schottky barrier height; heterojunction; biaxial strain
Categories
Funding
- Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University, China [2020-520000-83-01-324061]
- National Natural Science Foundation of China [61264004]
- High-level Creative Talent Training Program in Guizhou Province, China [[2015]4015]
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This study investigates the modulation effects of biaxial strain on the Schottky barrier of MoSi2N4/graphene and WSi2N4/graphene heterojunctions using first principles calculations. The results demonstrate that suitable external strain can transform the heterojunctions from Schottky p-type contacts to n-type contacts, and even highly efficient Ohmic contacts. These findings are of great importance for developing high-performance graphene-based electronic devices.
Reducing the Schottky barrier height (SBH) and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices. In this paper, the modulation effects of biaxial strain on the electronic properties and Schottky barrier of MoSi2N4 (MSN)/graphene and WSi2N4 (WSN)/graphene heterojunctions are examined by using first principles calculations. After the construction of heterojunctions, the electronic structures of MSN, WSN, and graphene are well preserved. Herein, we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN - an emerging two-dimensional (2D) semiconductor family with excellent mechanical properties - and graphene, the heterojunction can be transformed from Schottky p-type contacts into n-type contacts, even highly efficient Ohmic contacts, making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals (vdW) heterojunctions. Not only are these findings invaluable for designing high-performance graphene-based electronic devices, but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts, or between Schottky contacts and Ohmic contacts.
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