Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction (XRD) and photoluminescence (PL), combined with the state-of-the-art aberration corrected scanning transmission electron microscopy (Cs-STEM) techniques. To facility our study, we grow two multiple quantum wells (MQWs) samples, which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs (sample A). Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface, and the effect of the GaAs insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale. Therefore, the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity, interface roughness, and further an enhanced optical performance of InGaAs/AlGaAs QWs.

Automated summary

The segregation of In atoms in the InGaAs/AlGaAs interface and the suppression of segregation by a GaAs insertion layer are investigated using XRD, PL, and Cs-STEM techniques. The study provides direct evidence of In segregation and demonstrates the effectiveness of the GaAs layer in suppressing it on an atomic scale. These findings offer atomic-scale insights into the segregation behavior of In atoms and uncover the underlying mechanism of how the GaAs insertion layer improves the crystallinity, interface roughness, and optical performance of InGaAs/AlGaAs QWs.