Vanadium-Doped Molybdenum Diselenide Atomic Layers with Room-Temperature Ferromagnetism

Diluted two-dimensional magnetic semiconductors with high Curie temperature are highly sought after because of their potential applications in spintronics. Development of new techniques for preparation of high quality diluted magnetic semiconductors is critical for their applications. In this study, vanadium-doped molybdenum selenide, a new diluted magnetic semiconductor, was synthesized by a single-step chemical vapor deposition method. The merit of this method is that the molybdenum and vanadium precursors can be supplied to the growth substrate uniformly. Photoluminescence measurements reveal that the band gap of MoSe2 decreases after doping, which can be attributed to the formation of impurity energy band caused by p-type doping at the valence band maximum. Thus, the V-doped MoSe2 still maintains the semiconducting characteristics. Vibrating sample magnetometer studies clearly show the ferromagnetism of V-doped MoSe2 at room temperature. DFT calculations illustrates the joint contribution of V dopants and nearby atoms to the magnetic moments. This study provides future prospects for the multifunctional application of two-dimensional materials.

Automated summary

In this study, vanadium-doped molybdenum selenide, a new diluted magnetic semiconductor, was synthesized using a single-step chemical vapor deposition method. The material showed both semiconductor characteristics and ferromagnetism at room temperature. The study also investigated the effects of doping and nearby atoms on the material properties, providing future prospects for multifunctional applications of two-dimensional materials.