Journal
CHEMISTRY OF MATERIALS
Volume 34, Issue 8, Pages 3759-3769Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.2c00132
Keywords
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Funding
- U.S. National Science Foundation through the University of Washington Molecular Engineering Materials Center, a Materials Research Science and Engineering Center [DMR-1719797]
- U.S. National Science Foundation [DMR-1807394]
- Research Corporation for Science Advancement (RCSA) [27993]
- National Science Foundation [NNCI-2025489, NNCI-1542101]
- Molecular Engineering & Sciences Institute
- Clean Energy Institute
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CsPb(Cl1-xBrx)3 nanocrystals and thinfilms doped with trivalent rare-earth ions (RE3+=Y3+,La3+,Ce3+,Gd3+,Er3+,Lu3+) were studied and found to exhibit a new and often-emissive defect state inside the perovskite band gap. The near-band-edge photoluminescence remains just below the excitonic luminescence for all compositions of CsPb(Cl1-xBrx)3. The shifting of this photoluminescence is attributed to the changing lattice dielectric constants and is discussed in relation to quantum cutting in Yb3+-doped CsPb(Cl1-xBrx)3.
CsPb(Cl1-xBrx)3(0 <= x <= 1) nanocrystals and thinfilms doped with a series oftrivalent rare-earth ions (RE3+=Y3+,La3+,Ce3+,Gd3+,Er3+,Lu3+) have been prepared andstudied using variable-temperature and time-resolved photoluminescence spectroscopies. Wedemonstrate that aliovalent (trivalent) doping of this type universally generates a new and often-emissive defect state ca. 50 meV inside the perovskite band gap, independent of the specificRE3+dopant identity or of the perovskite form (nanocrystals vs thinfilms). Chloride-to-bromideanion exchange is used to demonstrate that this near-band-edge photoluminescence shifts withchanging band-gap energy to remain just below the excitonic luminescence for all compositionsof CsPb(Cl1-xBrx)3(0 <= x <= 1). Computations show that this shift stems from the effect of the changing lattice dielectric constantson a shallow defect-bound exciton. Microscopic descriptions of this dopant-induced near-band-edge state and its relation toquantum cutting in Yb3+-doped CsPb(Cl1-xBrx)3are discussed.
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