Novel SrTiO3-based ceramics with colossal permittivity, low dielectric loss, and high insulation resistivity via defect engineering

It is a great challenge to high colossal permittivity (CP, epsilon(r)) in polycrystal ceramics together with low dielectric loss (tan delta) and high insulation resistivity (rho) due to the miniaturization of electrical devices. In this contribution, the defect dipoles [Ti4+center dot e-Ce-Sr(center dot center dot)-e center dot Ti4+] and [Ce-Sr(center dot)-e center dot Ti4+] have been actively induced in the Sr1-1.5xCexTiO3 (SCT) systems by doping Ce ions with amphoteric nature to address this issue. The ultra-stable dielectric performance under the external stimulus, with epsilon(r) = 12,406 (with low variation of < +/- 10%) and tan delta < 0.08, can be achieve in the x = 0.01 sample within the temperature range of 10-200 ? and at the frequencies ranging from 20 Hz to 1 MHz, accompanied by high insulation with rho > 10(10) omega center dot cm with low degradation rate under harsh test conditions of 2-4.5 kV/cm. This work paves a path by multisite defect engineering to achieve high-performance CP ceramics.

Automated summary

In this study, active defect dipoles were induced in polycrystal ceramics to achieve high colossal permittivity, low dielectric loss, and high insulation resistivity. The results showed stable dielectric performance under external stimulus, with high permittivity, low dielectric loss, and high insulation resistivity.