Low dielectric loss, colossal permittivity, and high breakdown electric field in Al-doped Y2/3Cu3Ti4O12 ceramics

The miniaturization and high capacitance of electronic components are driving the development of highperformance electronic ceramic materials. In this work, we design a new strategy to achieve satisfactory dielectric properties with low loss, colossal permittivity, and a high breakdown electric field (Eb) in Al-doped Y2/ 3Cu3Ti4O12 (YCTO) ceramics prepared by a solid-phase synthesis method. The dielectric loss decreased with Al doping in the YCTO. The dielectric constant and the Eb were improved upon Al doping. With Al doping levels of 0.03 and 0.05, Y2/3Al0.03Cu2.97Ti4O12 and Y2/3Al0.05Cu2.95Ti4O12 ceramics displayed, respectively, a suppressed loss tangent of about 0.028 and 0.031, a high dielectric constant of approximately 9540 and 11792, and an Eb of approximately 4.32 and 4.54 kV/cm. The improved dielectric properties of the produced ceramics were closely linked to enhanced grain boundaries resistance. This study explores the physical mechanism behind the high performance of the YCTO-based ceramics, and also provides theoretical support for the application of devices comprising YCTO and related materials.

Automated summary

This study presents a new strategy for achieving high-performance electronic ceramic materials with low loss, colossal permittivity, and high breakdown electric field. The addition of Al doping enhances the dielectric properties of the ceramics, resulting in decreased dielectric loss, improved dielectric constant, and increased breakdown electric field.