Journal
APPLIED SURFACE SCIENCE
Volume 585, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2022.152688
Keywords
InP; Fluorine plasma; Interface
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In this study, the effects of fluorine plasma pre-treatment with different exposure time on InP metal-oxide-semiconductor capacitor device were investigated. The optimal 3-minute F plasma pre-treatment significantly improved device characteristics by suppressing native oxide formation and passivating interface traps, providing a solution for future high-performance InP MOS devices.
In this study, the effects of fluorine (F) plasma pre-treatment with different exposure time on electrical properties of high-kappa-based InP metal-oxide-semiconductor capacitor device were investigated. With the optimal F plasma pre-treatment on InP surface for 3 min, the device characteristics including the frequency dispersion, leakage current density and interface trap density were significantly improved due to the optimal F plasma that suppressed the formation of the native oxides by forming strong In-F bonds and passivated the interface traps at the high-kappa/InP interface. The present results show that the approach of appropriate F plasma pre-treatment provides a solution for future applications of high-performance InP MOS devices.
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