Direct growth of graphene-MoS2 heterostructure: Tailored interface for advanced devices

Ultrathin film heterostructures represent the main foundations of numerous modern devices. Recently, 2D materials combined into van der Waals multilayers have emerged as an appealing option to conform hetero-structures with outstanding properties while circumventing the interfacial lattice-matching constraints encountered in heteroepitaxial synthesis. Among them, the MoS2-Graphene heterostructures exhibit suitable contact properties that promote efficient charge injection and transfer. We here report on the direct synthesis of graphene films on MoS2 by Plasma Assisted CVD. We assess the influence of using Sulphur vapor during the synthesis to heal the S vacancies, both of natural origin and induced during the growth. We find that the graphene grain size increases when using S and relate this effect with the defect density of MoS2 and the interfacial conductance. The methodologies shown are intrinsically scalable and represent a step forward in the direct growth of van der Waals heterostructures for advanced devices.

Automated summary

Ultrathin film heterostructures are essential for modern devices. The combination of 2D materials into van der Waals multilayers offers a promising method to create heterostructures with outstanding properties. The MoS2-Graphene heterostructures exhibit suitable contact properties for efficient charge injection and transfer. In this study, graphene films were directly synthesized on MoS2 using Plasma Assisted CVD, and the use of Sulfur vapor was found to increase the graphene grain size.