Single β-Ga2O3 nanowire based lateral FinFET on Si

A fin field-effect transistor (FinFET) based on single beta-Ga2O3 nanowire with a diameter of similar to 60nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of similar to 4 x 10(8), a system-limit low leakage current (similar to 4fA), and a relatively low subthreshold swing (similar to 110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f(2) noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the beta-Ga2O3 FinFET in this work. Published under an exclusive license by AIP Publishing.

Automated summary

In this study, a fin field-effect transistor (FinFET) based on a β-Ga2O3 nanowire with a diameter of approximately 60nm on a Si substrate was demonstrated. The device showed excellent performance with high on/off ratio, low leakage current, and low subthreshold swing. Simulation results were consistent with experimental measurements, and trap-related 1/f noise and 1/f^2 noise were identified through low frequency noise analysis.