4.6 Article

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Journal

APPLIED PHYSICS LETTERS
Volume 120, Issue 17, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0087717

Keywords

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Funding

  1. Spins and Heat in Nanoscale Electronic Systems, an Energy Frontier Research Center - U.S. Department of Energy, The Office of Science, Basic Energy Sciences Division [SC0012670]
  2. University of California, Riverside Academic Senate Committee on Research grant

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The resistive switching properties of molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied using metal insulator metal configurations with different electrode materials. The devices show forming-free bipolar resistive switching (BRS) behavior, self-compliant current BRS characteristics, and the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.
Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10(3), and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes. Published under an exclusive license by AIP Publishing.

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