Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p-n junction-structure

Obtaining p-type wide-bandgap semiconductors with a bandgap >3.5 eV is still challenging. Here, p-n junction devices based on wide-bandgap (>= 4 eV) p-type MnO quantum dots (QDs) and n-type Si-doped GaN are fabricated. The p-MnO QDs are synthesized by cost-effective femtosecond laser ablation in liquid. A simple spray-coating method is used for fabricating the p-MnO/n-GaN-based solar-blind deep UV (DUV) photodetector. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy reveal the MnO QD crystal structure. X-ray photoelectron microscopy analysis reveals good band alignment between p-MnO QDs and n-GaN, demonstrating the (type-II) staggered band alignment p-n heterojunction-based device. Electrical and photocurrent measurements show a high photocurrent response with a low dark current, while superior photo-responsivity (similar to 2530 mA/W) is achieved, along with self-powered and visible-blind characteristics (265 nm cutoff), demonstrating a high-performance DUV device with high detection limit for low light level applications. This study provides insights into the potential of p-type MnO QDs for III-nitride p-n junction DUV devices. (C) 2022 Author(s).

Automated summary

In this study, p-n junction devices based on wide-bandgap p-type MnO quantum dots and n-type Si-doped GaN were fabricated. The fabricated solar-blind deep UV photodetector demonstrated high photocurrent response, low dark current, and superior photo-responsivity, making it suitable for low light level applications.