4.6 Article

Controlling domain wall and field-free spin-orbit torque switching in synthetic antiferromagnets

Journal

APPLIED PHYSICS LETTERS
Volume 120, Issue 22, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0092945

Keywords

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Funding

  1. Guangdong Basic and Applied Basic Research Foundation [2019A1515111110]
  2. Guangdong Special Support Project [2019BT02X030]
  3. Shenzhen Fundamental Research Fund [JCYJ20210324120213037]
  4. Shenzhen Peacock Group Plan [KQTD20180413181702403]
  5. Pearl River Recruitment Program of Talents [2017GC010293]
  6. National Natural Science Foundation of China [12004319]
  7. HKSAR Research Grants Council (RGC) General Research Fund [14306117, 27202919]
  8. HKU Start-Up Grant
  9. Seed Fund [202011159019]

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Deterministic switching in synthetic antiferromagnets can be achieved through flexible domain control in the absence of external magnetic fields, addressing the technical challenge of requiring an in-plane magnetic field.
Perpendicular magnetization switching driven by spin-orbit torques plays an increasingly important role for spintronic devices toward practical applications but is also hindered by the well-known technical challenge that an external in-plane magnetic field is required for deterministic switching. Here, we show that the deterministic switching can be achieved in synthetic antiferromagnets through the flexible domain control in the absence of external magnetic fields. Specifically, we have observed that the domain wall (DW) distorts under an applied electric current in contrast to the conventional rigid DW motion in a single ferromagnet. More importantly, the distorted DWs can be precisely controlled under zero magnetic field, leading to the deterministic switching. Our results indicate that the critical technical challenge may be addressed by employing a synthetic antiferromagnetic layer through the DW motion dominated field-free switching. Published under an exclusive license by AIP Publishing.

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