Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) beta-Ga2O3 Schottky barrier diodes

We observed line-shaped defects in halide vapor-phase epitaxial (001) beta-Ga2O3 SBDs. Light emission patterns, representing the reverse leakage current, were observed at these line-shaped defects. In atomic force microscopy observations, the line-shaped defects appeared as grooves with a typical depth and width of 113 and 520 nm, respectively. Such defects corresponded to a leakage current of -0.23 mu A at -200 V. Simulation results indicated that the electric field, with an intensity of 1.3 MV/cm, was highly concentrated at the bottom of the line defects. According to the cross-sectional scanning transmission electron microscopy analysis, the line-shaped defects were generated from a dislocation network beneath the crystal near the surface. Published under an exclusive license by AIP Publishing.

Automated summary

Line-shaped defects were observed in halide vapor-phase epitaxial (001) beta-Ga2O3 SBDs, and these defects were found to be related to the reverse leakage current. Atomic force microscopy observation and simulation results showed that the formation of line-shaped defects originated from a dislocation network near the crystal surface.