Journal
APPLIED PHYSICS LETTERS
Volume 120, Issue 11, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0087678
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Funding
- Japan Society for Promotion of Science [21H04546, 20K20349]
- RIEC Nation-Wide Collaborative Research [H31/A01]
- Office of Naval Research [N000141712976]
- Grants-in-Aid for Scientific Research [21H04546] Funding Source: KAKEN
- U.S. Department of Defense (DOD) [N000141712976] Funding Source: U.S. Department of Defense (DOD)
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The response of lateral n(+)-i-n-n(+) graphene field-effect transistors (GFETs) to terahertz (THz) radiation is analyzed in this study. The nonlinearity caused by Coulomb drag and plasmonic oscillations in the GFET channel enables a resonantly strong response, which can be used for effective resonant detection of THz radiation.
We analyze the response of lateral n(+)-i-n-n(+) graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation. Published under an exclusive license by AIP Publishing.
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