Distributed polarization-doped GaN p-n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p-n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I-V characteristics in Pi-doped GaN power p-n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 x 10(16) cm(-3) in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 x 10(16) cm(-3) is realized due to the gradual grading of Al0-0.72GaN over 1 mu m. The Pi-doped p-n diodes have an ideality factor as low as 1.1 and a 0.10V higher turn-on voltage than the impurity-doped p-n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1m Omega cm(2) is extracted from the Pi-doped p-n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of similar to 1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Automated summary

This study demonstrates near-ideal forward and reverse characteristics in GaN power devices using polarization-induced (Pi) doping, highlighting the potential benefits of Pi-doped GaN power devices.