Journal
APPLIED PHYSICS LETTERS
Volume 120, Issue 18, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0087652
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Funding
- Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Government of India [TAR/2020/000241]
- Indian Institute of Science
- Council of Scientific and Industrial Research, Government of India, New Delhi
- Indian Institute of Science, Bangalore, India
- Indian National Science Academy senior scientist fellowship
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A heterostructure of MoS2/SnO2 has been fabricated to achieve self-powered broadband photodetection ranging from UV-visible to near-infrared wavelength by utilizing the built-in electric potential at SnO2/MoS2 interface. The device exhibits excellent photoresponse with high responsivity and detectivity under near-infrared illumination, as well as fast response time. The excellent performance is attributed to the high electron transport behavior of SnO2 and the built-in electric field at the interface.
A heterostructure of MoS2/SnO2 has been fabricated. A SnO2 film was deposited by Sn sputtering followed by oxidation of a Sn film in the ambient. Later, a MoS2 film was deposited on SnO2 by pulsed laser deposition. The built-in electric potential generated at the SnO2/MoS2 interface facilitates self-powered broadband photodetection ranging from the ultraviolet-visible to near-infrared (NIR) wavelength. Under NIR illumination, the device exhibits excellent photoresponse with a responsivity of 0.35 A W-1 and a detectivity of 1.25 x 10(11) Jones at 0 V. Moreover, the device shows faster response with rise/fall times as 153/200 ms. The excellent performance of the device is attributed to the high electron transport behavior of SnO2 and a built-in electric field at the interface.& nbsp;Published under an exclusive license by AIP Publishing.
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