Journal
APPLIED PHYSICS EXPRESS
Volume 15, Issue 5, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac66c2
Keywords
AlN; sputtering; annealing; UV-C LED; AlGaN
Categories
Funding
- MEXT Program for Building Regional Innovation Ecosystems, JSPS KAKENHI [19K15025, 21K04903, 21K14545]
- JST CREST [16815710]
- JST FOREST [JPMJFR203I]
- JST SCORE, JST aXis [JPMJAS2011]
- Ministry of Economy, Trade, and Industry Monozukuri R&D Support Grant Program for SMEs [JPJ005698]
- GaN Consortium
- NEDO leading research program
- Grants-in-Aid for Scientific Research [21K14545, 21K04903, 19K15025] Funding Source: KAKEN
Ask authors/readers for more resources
In this study, we optimized the sputter-deposition conditions for AlN and MOVPE growth conditions for AlGaN to reduce hillock density and size. After achieving surface-flattening of AlGaN, UV-C LEDs with a wavelength of 263 nm were fabricated on FFA Sp-AlN, and maximum external quantum efficiencies of approximately 4.9% and 8.0% were achieved without and with silicone encapsulation, respectively.
Regarding deep-ultraviolet optical device applications, face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) is a promising alternative to the conventional metalorganic vapor phase epitaxy (MOVPE)-prepared AlN templates on sapphire substrates. However, FFA Sp-AlN tends to exhibit AlGaN growth-related hillock generation and surface morphology deterioration. In this study, we optimized the sputter-deposition conditions for AlN and MOVPE growth conditions for AlGaN to respectively reduce hillock density and size. After confirming AlGaN surface-flattening, we fabricated 263 nm wavelength UV-C LEDs on the FFA Sp-AlN and achieved maximum external quantum efficiencies of approximately 4.9% and 8.0% without and with silicone encapsulation, respectively.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available