Journal
APPLIED PHYSICS EXPRESS
Volume 15, Issue 7, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac6e28
Keywords
silicon nitride; STEM; EELS; bandgap; subgap excitation
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We observed the nanoscale distribution of subgap excitations induced by Ga-ion beam processing in beta-Si3N4 using electron energy-loss spectroscopy. By combining crystallinity, composition, and bandgap measurements, we found that defects excited at different energy levels exhibit different dependence trends with respect to crystallinity. This proposed technique can effectively distinguish between various amorphous materials.
We observed nanoscale distribution of subgap excitations induced by Ga-ion beam processing in beta-Si3N4 via electron energy-loss spectroscopy performed using a monochromated (0.1 eV) and aberration-corrected scanning transmission electron microscope. A sufficiently low operating voltage (30 kV) was selected to suppress background caused by Cerenkov loss in beta-Si3N4 with a high refractive index. By further combining crystallinity, composition, and bandgap measurements, we found that defects excited at the band edge (6 eV) and lower energies (3 eV) exhibit different dependence trends with respect to crystallinity. The proposed technique was verified to effectively distinguish between various amorphous materials.
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