Photoinduced Multi-Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D-Perovskite Floating Gate

The development of floating-gate nonvolatile memory (FGNVM) is limited by the charge storage, retention and transfer ability of the charge-trapping layer. Here, it is demonstrated that due to the unique alternate inorganic/organic chain structure and superior optical sensitivity, an insulating 2D Ruddlesden-Popper perovskite (2D-RPP) layer can function both as an excellent charge-storage layer and a photosensitive layer. Optoelectronic memory composed of a MoS2/hBN/2D-RPP (MBR) van der Waals heterostructure is demonstrated. The MBR device exhibits unique light-controlled charge-storage characteristics, with maximum memory window up to 92 V, high on/off ratio of 10(4), negligible degeneration over 10(3 )s, >1000 program/erase cycles, and write speed of 500 mu s. Dependent on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with up to 11 and 22 distinct resistance states, respectively. The optical program power for each bit is as low as 36/10 pJ for PPC/NPC. The results not only reveal the potential of 2D-RPP as a superior charge-storage medium in floating-gate memory, but also provides an effective strategy toward fast, low-power and stable optical multi-bit storage and neuromorphic computing.

Automated summary

This study demonstrates an optoelectronic memory device composed of a MoS2/hBN/2D-RPP (MBR) van der Waals heterostructure. The MBR device exhibits unique light-controlled charge-storage characteristics, with advantages including high memory window, high on/off ratio, negligible degeneration, multiple program/erase cycles, and fast write speed. Additionally, depending on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with multiple distinct resistance states.