Journal
ADVANCED MATERIALS
Volume 34, Issue 26, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202202301
Keywords
defect passivation; dynamic healing interface; ion migration; perovskite solar cells; solid-to-liquid conversion
Categories
Funding
- National Key Research and Development Program of China [2021YFE0111000]
- National Natural Science Foundation of China [22109053, 61774139, 62004083, U1802257]
- Guangdong Basic and Applied Basic Research Foundation [2020A1515110548]
- Guangzhou Science and Technology Planning Project [202102020775, 202102010091]
- Natural Science Foundation of Guangdong Province [2019B151502061, 2020A1515011123]
- Fundamental Research Funds for the Central Universities [21620348, 21619311]
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This study presents a dynamic healing interface (DHI) for highly efficient and stable perovskite solar cells (PSCs) by incorporating a low-melting-point small molecule onto the perovskite film surface. The solid-to-liquid phase conversion of DHI enhances charge extraction, passivates defects, and suppresses ion migration. Furthermore, the stability of PSCs is remarkably improved under various environmental conditions.
Healing charge-selective contact interfaces in perovskite solar cells (PSCs) highly determines the power conversion efficiency (PCE) and stability. However, the state-of-the-art strategies are often static by one-off formation of a functional interlayer, which delivers fixed interfacial properties during the subsequent operation. As a result, defects formed in-service will gradually deteriorate the photovoltaic performances. Herein, a dynamic healing interface (DHI) is presented by incorporating a low-melting-point small molecule onto perovskite film surface for highly efficient and stable PSCs. Arising from the reduced non-radiative recombination, the DHI boosts the PCE to 12.05% for an all-inorganic CsPbIBr2 solar cell and 14.14% for a CsPbI2Br cell, as well as 23.37% for an FA(0.92)MA(0.08)PbI(3) (FA = formamidinium, MA = methylammonium) cell. The solid-to-liquid phase conversion of DHI at elevated temperature causes a longitudinal infiltration into the bulk perovskite film to maximize the charge extraction, passivate defects at grain boundaries, and suppress ion migration. Furthermore, the stability is remarkably enhanced under air, heat, and persistent light-irradiation conditions, paving a universal strategy for advanced perovskite-based optoelectronics.
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