Journal
ADVANCED MATERIALS
Volume 34, Issue 23, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202110568
Keywords
carrier dynamics; indirect excitons; long-lived excitons; strain engineering; transition metal dichalcogenides
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Funding
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0010697]
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In this research, strain-induced modifications of optical properties and their impact on exciton dynamics in single-crystalline 2D transition metal dichalcogenides (TMDs) were studied through transient optical absorption. The study found significant spectral redshifts and dramatic slowing down of exciton dynamics in TMD monolayers grown under strain conditions, contrasting with their freestanding form and traditionally grown TMDs. These findings provide key insights into the influence of growth conditions on optical excitations and promote emerging optoelectronic applications of monolayer TMDs.
Strain-engineering in 2D transition metal dichalcogenide (TMD) semiconductors has garnered intense research interest in tailoring the optical properties via strain-induced modifications of the electronic bands in TMDs, while its impact on the exciton dynamics remains less understood. To address this, an extensive study of transient optical absorption (TA) of both W- and Mo-based single-crystalline monolayer TMDs grown by a recently developed laser-assisted evaporation method is performed. All spectral features of the monolayers as grown on fused silica substrates exhibit appreciable redshifts relating to the existence of strain due to growth conditions. Moreover, these systems exhibit a dramatic slowing down of exciton dynamics (100s of picoseconds to few nanoseconds) with an increase in carrier densities, which strongly contrasts with the monolayers in their freestanding form as well as in comparison with more traditionally grown TMDs. The observations are related to the modifications of the electronic bands as expected from the strain and associated population of the intervalley dark excitons that can now interplay with intravalley excitations. These findings are consistent across both the Mo- and W-based TMD families, providing key information about the influence of the growth conditions on the nature of optical excitations and fostering emerging optoelectronic applications of monolayer TMDs.
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