Journal
ADVANCED MATERIALS
Volume 34, Issue 21, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202201387
Keywords
2D heterostructures; bandgap; graphene; moire superlattices; monolayer hexagonal boron nitride
Categories
Funding
- Army Research Office (ARO) [W911NF-17-1-0312]
- National Science Foundation (NSF) [DMR-1807984, DMR-2118809]
- Blue Sky Program in the College of Engineering at the University of Michigan
- W. M. Keck Foundation
- National Energy Research Scientific Computing (NERSC) Center, a U.S. Department of Energy (DOE) Office of Science User Facility [DE-AC02-05CH11231]
- NSF QII-TAQS [MPS-1936219]
- Kwanjeong Educational Foundation Scholarship
- U.S. DOE Office of Science, Basic Energy Sciences, Materials Sciences, and Engineering Division [DE-SC0021965]
- U.S. Department of Energy (DOE) [DE-SC0021965] Funding Source: U.S. Department of Energy (DOE)
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This study proposes a growth process mediated by an hBN/G interface for the controlled synthesis of high-quality monolayer hBN. The scalable epitaxy of unidirectional monolayer hBN on graphene aligned to the underlying graphene lattice is achieved. Additionally, it is discovered that monolayer hBN exhibits deep-ultraviolet emission with a giant renormalized direct bandgap on graphene.
Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface-mediated growth process for the controlled synthesis of high-quality monolayer hBN is proposed and further demonstrated. It is discovered that the in-plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moire superlattice consistent with single-domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep-ultraviolet emission at 6.12 eV stems from the 1s-exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer-scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.
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