Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 30, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202200660
Keywords
field-free switching; L1; (0)-FeCrPt; magnetic frustration; spin-orbit torque
Categories
Funding
- National Key Research and Development Program of China [2019YFB2005800]
- Natural Science Foundation of China [51625101, 52130103, 12174426, 11874082, 12104486, 11934017, 11921004, 51971026]
- ISF-NSFC Joint Research Program [51961145305]
- State Key Laboratory for Advanced Metals and Materials [2019Z-10]
- Beijing Natural Science Foundation Key Program [Z190007, Z200007]
- Fundamental Research Funds for the Central Universities [FRF-TP-16-001C2]
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Cr doping in a single-layer L1(0)-FePt structure enables field-free magnetization switching through spin-orbit torque (SOT), by forming an in-plane magnetization component oriented towards the L1(0)-FeCrPt(110) direction. The considerable in-plane exchange-coupling effective field resulting from the Cr doping facilitates the disintegration of rotational switching symmetry and promotes field-free switching. This study provides an attractive method for field-free electrical manipulations of magnetization in single-layer ferromagnets.
Electrical switching of magnetization through spin-orbit torque (SOT) induced by composition gradient in single-layer L1(0)-FePt has garnered considerable research interest owing to its inherent superior perpendicular magnetic anisotropy (PMA) that provides ultrahigh capacity to magnetic storage and memory devices. However, a large in-plane external magnetic field is typically required to assist SOT-driven switching, which is still a limitation for the practical applications of L1(0)-FePt. This study reports a realizable field-free magnetization switching by SOT via Cr doping to form a single-layer magnetic structure with an in-plane magnetization component oriented toward L1(0)-FeCrPt (110) direction that strongly depends on the magnetocrystalline anisotropy. The Cr doping yields a considerable in-plane exchange-coupling effective field that is conducive toward disintegrating the rotational switching symmetry and facilitates field-free switching in single-layer films with PMA. Furthermore, this in-plane effective field exhibits a nonmonotonic evolution with respect to the Cr-doping concentration, which is validated using first-principles calculation with a frustration-based model of magnetic exchange interactions. Thus, this study delivers an attractive method to facilitate the field-free electrical manipulations of magnetization in single-layer ferromagnets to motivate innovative designs for advanced spintronics devices.
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