Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing ID structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfurcatalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 X 10(2) A/W and an ultrahigh detectivity of 1.10 x 10(11) Jones for 1.55 mu m incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 mu m light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 X 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Automated summary

The near-infrared polarimetric image sensor has become a research hotspot due to its wide range of applications. The ordered GaSb nanowire arrays synthesized through a sulfur-catalyzed chemical vapor deposition process show potential for near-infrared polarization photodetection. The sulfur-passivation GaSb nanowire-based photodetector exhibits lower dark current and higher responsivity than pure GaSb nanowires. A flexible polarimetric image sensor with good imaging ability for incident near-infrared polarization light is successfully constructed on the ordered S-GaSb nanowire arrays. These properties empower ordered S-GaSb nanowire arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.