4.8 Article

Visualization of Band Shifting and Interlayer Coupling in WxMo1-xS2 Alloys Using Near-Field Broadband Absorption Microscopy

Journal

ACS NANO
Volume 16, Issue 5, Pages 7503-7511

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c10593

Keywords

WxMo1-xS2 alloy; band shifting; interlayer coupling; scanning near-field optical microscopy (SNOM); broadband absorption microscopy

Funding

  1. Innovative Instrumentation project of Academia Sinica [AS-CFII-108-203]
  2. Ministry of Science and Technology of Taiwan [MOST 109-2112-M-001-038, 110-2112-M-001-059]
  3. Ministry of Science and Technology [MOST 109-2124-M007-001-MY3, 108-2112-M-007-006-MY3]
  4. Frontier Research Center on Fundamental and Applied Sciences of Matters
  5. Center for Quantum Technology of National Tsing Hua University

Ask authors/readers for more resources

Beyond-diffraction-limit optical absorption spectroscopy provides detailed information on the band structures of 2D materials, and near-field broadband absorption microscopy allows visualization and analysis of their spatially varying band structures.
Beyond-diffraction-limit optical absorption spectroscopy provides in-depth information on the graded band structures of composition-spread and stacked two-dimensional materials, in which direct/indirect bandgap, interlayer coupling, and defects significantly modify their optoelectronic functionalities such as photo-luminescence efficiency. We here visualize the spatially varying band structure of monolayer and bilayer transition metal dichalcogenide alloys by using near-field broadband absorption microscopy. The near-field spectral and spatial information manifests the excitonic band shift that results from the interplay of composition spreading and interlayer coupling. These results enable us to identify, notably, the top layer of the bilayer alloy as pure WS2. We also use the aberration-free near-field transmission images to demarcate the exact boundaries of alloyed and pure transition metal dichalcogenides. This technology can offer valuable insights on various layered structures in the era of stacking science in the quest of quantum optoelectronic devices.

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