Study on the Performance of Oxygen-Rich Zn(O,S) Buffers Fabricated by Sputtering Deposition and Zn(O,S)/Cu(In,Ga)(S,Se)2 Interfaces

We developed a novel process for fabricating oxygen-rich Zn(O,S) buffer layers by magnetron reactive sputtering with a single oxygen-rich Zn(O,S) target, suitable for industrial all- dry production. Then, we successfully fabricated Cd-free Cu-pressure during sputtering from 0 to 20%, we precisely controlled the Zn(O,S) composition, then systematically investigated its effects on the quality of oxygen-rich Zn(O,S) films, the properties of formed p-n junctions, and the performance of CIGSSe solar cells with Zn(O,S) buffer. We demonstrated that reactive sputtering with a Zn(O,S) target can generate a homogeneous, high-quality oxygen-rich Zn(O,S) buffer on large-area substrates. We observed a unique and unusual phenomenon: the appropriate content of secondary phase ZnSO4 and ZnSO3 improved the band alignment for oxygen-rich Zn(O,S). Combining our proposed schematic diagram of band alignmentat the Zn(O,S)/CIGSSe interface, we established a crucial correlation between the device performance and the interfacial properties at the p-n junction. For the CIGSSe device performance, the band alignment matching at the heterojunction plays a primary role, and the quality of oxygen-rich Zn(O,S) films plays a secondary role. Consequently, an excellent oxygen-rich Zn(O,S) buffer can be obtained with 10% Zn(O,S) deposition oxygen partial pressure, and the optimized device shows a higher V-oc (447 mV) and a similar conversion efficiency (11.2%) than conventional CIGSSe devices with CdS buffer.

Automated summary

We developed a novel process for fabricating oxygen-rich Zn(O,S) buffer layers suitable for industrial production. By precisely controlling the composition of Zn(O,S), we investigated its effects on film quality, p-n junction properties, and CIGSSe solar cell performance. We observed that the appropriate content of ZnSO4 and ZnSO3 secondary phases improved the band alignment of oxygen-rich Zn(O,S). By establishing a crucial correlation between device performance and interfacial properties, we found that the band alignment matching at the heterojunction plays a primary role in CIGSSe device performance. An excellent oxygen-rich Zn(O,S) buffer can be obtained with 10% Zn(O,S) deposition oxygen partial pressure.