Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 9, Pages 11718-11726Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c23986
Keywords
deep ultraviolet; artificial synapse; transistor; ultrathin film; selectivity
Funding
- National Natural Science Foundation of China (NSFC) [22175050]
- Distinguished Youth Foundation of Anhui Province [1808085J03]
- Natural Science Foundation of Anhui Province [1908085QB89]
- Fundamental Research Funds for the Central Universities of China [PA2021GDSK0098]
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Deep ultraviolet-light-stimulated artificial synaptic devices have potential applications in various fields and can simulate various synaptic behaviors. The proposed artificial synaptic structures on flexible substrates also successfully simulate typical synaptic behaviors.
Deep ultraviolet (DUV)-light-stimulated artificial synaptic devices exhibit potential applications in various disciplines including intelligent military monitoring, biological and medical analysis, flame detection, etc. Along these lines, we report here a DUV-light-stimulated synaptic transistor fabricated on a poly(3-hexylthiophene) (P3HT) ultrathin film that responds selectively to DUV light. Significantly, our devices have the ability to successfully simulate various synapse-like behaviors including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term memory (STM), long-term memory (LTM), STM-to-LTM transition, and learning and forgetting behaviors. Moreover, the proposed artificial synaptic structures were also fabricated on flexible poly(ethylene terephthalate) (PET) substrates and also successfully simulated typical synaptic behaviors, which could be of great importance for wearable applications.
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