Large-Area, High-Specific-Power Schottky-Junction Photovoltaics from CVD-Grown Monolayer MoS2

The deployment of two-dimensional (2D) materials for solar energy conversion requires scalable large-area devices. Here, we present the design, modeling, fabrication, and characterization of monolayer MoS2-based lateral Schottky-junction photovoltaic (PV) devices grown by using chemical vapor deposition (CVD). The device design consists of asymmetric Ti and Pt metal contacts with a work function offset to enable charge separation. These early stage devices show repeatable performance under 1 sun illumination, with V-OC of 160 mV, J(SC) of 0.01 mA/cm(2), power conversion efficiency of 0.005%, and specific power of 1.58 kW/kg. An optoelectronic model for this device is developed and validated with experimental results. This model is used to understand loss mechanisms and project optimized device designs. The model predicts that a 2D PV device with similar to 70 kW/kg of specific power can be achieved with minimum optimization to the current devices. By increasing the thickness of the absorber layer, we can achieve even higher performance devices. Finally, a 25 mm(2) area solar cell made with a 0.65 nm thick MoS2 monolayer is demonstrated, showing V-OC of 210 mV under 1 sun illumination. This is the first demonstration of a large-area PV device made with CVD-grown scalable 2D materials.

Automated summary

In this study, lateral Schottky-junction photovoltaic devices based on monolayer MoS2 were fabricated using chemical vapor deposition (CVD) and characterized. The devices showed repeatable performance under 1 sun illumination and an optoelectronic model was developed to understand loss mechanisms and optimize device designs. A large-area solar cell made with CVD-grown scalable 2D materials was successfully demonstrated.