Journal
MATERIALS LETTERS-X
Volume 12, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mlblux.2021.100111
Keywords
Doped ceria; Defects; Dielectrics; Dopant-vacancy interaction; Ionic conductivity
Funding
- Science and Engineering Research Board (Govt. of India) [EMR/2017/000325]
- Department of Science & Technology and Biotechnology (Govt. of West Bengal) [ST/P/ST/16G-19/2018]
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The defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95 is primarily determined by the concentration of free oxygen vacancies and the interaction with dopant cations. An increase in temperature results in a higher dielectric constant, leading to a decrease in dopant-vacancy association and an increase in ionic conductivity.
This study mainly investigates the defect interaction mediated ionic conductivity of Ce0.9Sm0.1O1.95. The ionic conductivity mainly depends on the concentration of free oxygen vacancies. The formed oxygen vacancies are bounded with dopant cations due to columbic interaction which depends on the dielectric constant of the material. With the rise in temperature dielectric constant increases and dopant-vacancy association decreases. Consequently, ionic conductivity increases with temperature due to the enhancement of concentration of free oxygen vacancies. The association and migration energy decrease at higher temperature.
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