3.8 Article

Dimensionality of mobile electrons at x-ray-irradiated LaAlO3/SrTiO3 interfaces

Journal

ELECTRONIC STRUCTURE
Volume 4, Issue 1, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/2516-1075/ac4e74

Keywords

oxide interfaces; oxygen vacancies; effect of x-ray irradiation; electronic structure; ARPES; dimensionality; quantum well

Funding

  1. Swiss National Science Foundation [200021_165529]
  2. Swiss Excellence Scholarship Grant ESKAS [2015.0257]
  3. Romanian UEFISCDI Agency [475 PN-III-P4-ID-PCE-2020-2540]
  4. FA [200020B_188709]
  5. Swiss National Science Foundation (SNF) [200020B_188709, 200021_165529] Funding Source: Swiss National Science Foundation (SNF)

Ask authors/readers for more resources

The electronic structure of LaAlO3/SrTiO3 (LAO/STO) samples was investigated by soft-x-ray ARPES, revealing a 3D behavior of the x-ray generated mobile electron system (MES).
Electronic structure of LaAlO3/SrTiO3 (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex situ, was investigated by soft-x-ray ARPES focussing on the Fermi momentum (k (F)) of the mobile electron system (MES). X-ray irradiation of these samples at temperatures below 100 K creates oxygen vacancies (V(O)s) injecting Ti t (2g)-electrons into the MES. At this temperature the oxygen out-diffusion is suppressed, and the V(O)s should appear mostly in the top STO layer. The x-ray generated MES demonstrates, however, a pronounced three-dimensional (3D) behavior as evidenced by variations of its experimental k (F) over different Brillouin zones. Identical to bare STO, this behavior indicates an unexpectedly large extension of the x-ray generated MES into the STO depth. The intrinsic MES in the standard LAO/STO samples annealed in situ, in contrast, demonstrates purely two-dimensional (2D) behaviour. The relevance of our ARPES data analysis is supported by model calculations to compare the intensity vs gradient methods of the k (F) determination as a function of the energy resolution ratio to the bandwidth. Based on self-interaction-corrected DFT calculations of the MES induced by V(O)s at the interface and in STO bulk, we discuss possible scenarios of the puzzling 3D-ity. It may involve either a dense ladder of quantum-well states formed in a long-range interfacial potential or, more likely, x-ray-induced bulk metallicity in STO accessed in the ARPES experiment through a short-range interfacial barrier. The mechanism of this metallicity may involve remnant V(O)s and photoconductivity-induced metallic states in the STO bulk, and even more exotic mechanisms such as x-ray induced formation of Frenkel pairs.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

3.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available