Journal
JOURNAL OF SEMICONDUCTORS
Volume 43, Issue 2, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1674-4926/43/2/021701
Keywords
g-C3N4; photocatalyst; electronic structure
Categories
Funding
- National Natural Science Foundation of China [21975245, 51972300, 61674141, 12004094, 21976049]
- Key Research Program of Frontier Science, CAS [QYZDB-SSW-SLH006]
- National Key Research and Development Program of China [2017YFA0206600, 2018YFE0204000]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB43000000]
- Natural Science Foundation of Hebei Province [F2019402063]
- Youth Foundation of Hebei Province Department of Education [QN2019326]
- Science and Technology Research and Development Program of Handan city [21422111246]
- Key Project of Handan University [2018101]
- Youth Innovation Promotion Association, Chinese Academy of Sciences [2020114]
- Doctoral Special Fund Project of Hebei University of Engineering
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Graphite carbon nitride (g-C3N4) has gained significant attention in the field of solar energy conversion, but faces limitations such as high recombination rate of charge carriers and low visible-light absorption. To address these issues, electronic structure tuning of g-C3N4 has been widely adopted, with strategies including vacancy modification, doping, crystallinity modulation, and synthesis of new molecular structures. Challenges and future trends in this area are also discussed.
The utilization of solar energy to drive energy conversion and simultaneously realize pollutant degradation via photocatalysis is one of most promising strategies to resolve the global energy and environment issues. During the past decade, graphite carbon nitride (g-C3N4) has attracted dramatically growing attention for solar energy conversion due to its excellent physicochemical properties as a photocatalyst. However, its practical application is still impeded by several limitations and shortcomings, such as high recombination rate of charge carriers, low visible-light absorption, etc. As an effective solution, the electronic structure tuning of g-C3N4 has been widely adopted. In this context, firstly, the paper critically focuses on the different strategies of electronic structure tuning of g-C3N4 like vacancy modification, doping, crystallinity modulation and synthesis of a new molecular structure. And the recent progress is reviewed. Finally, the challenges and future trends are summarized.
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