Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are observed. At the top, merging NWs develop common {1100} side facets. At the bottom, the NWs acquire roundish shapes. This observation is explained by the entirely different NW environments at the top and the bottom of the NWs. At the top, NWs are exposed to the Ga and N atomic fluxes giving rise to axial growth, resulting in the equilibrium growth shape with zero growth rate at the {1100} facets. At the bottom, NWs are shadowed from the impinging fluxes and are only annealed, allowing them to eventually approach the equilibrium crystal shape. The study of identical samples by grazing incidence small-angle X-ray scattering independently confirms these trends in the shape evolution of the sidewall facets.

Automated summary

The study of GaN nanowires by transmission electron microscopy and X-ray scattering reveals that the cross-sectional shape of the nanowires evolves differently along the length, with {1100} side facets at the top and roundish shapes at the bottom. This is attributed to the different growth environments at the top and bottom of the nanowires, where axial growth and annealing processes occur, respectively. Grazing incidence small-angle X-ray scattering independently confirms these trends in the shape evolution of the sidewall facets.