Related references
Note: Only part of the references are listed.Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices
Stefano Ippolito et al.
NATURE NANOTECHNOLOGY (2021)
Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer
Kraig Andrews et al.
ACS NANO (2020)
Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors
Yuda Zhao et al.
ADVANCED MATERIALS (2020)
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors
Jinbao Jiang et al.
ADVANCED SCIENCE (2020)
Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm
Xiao Zou et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Low-Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Jingli Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
A Comparative Study on Printable Solid Electrolytes toward Ultrahigh Current and Environmentally Stable Thin Film Transistors
Nikhil Cherukupally et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Concurrent Subthermionic and Strong Thermionic Transport in Inkjet-Printed Indium Zinc Oxide/Silver Hybrid-Channel Field-Effect Transistors
Sunil Kumar Behera et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Electrolyte-Gated n-Type Transistors Produced from Aqueous Inks of WS2 Nanosheets
Thomas M. Higgins et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
Yury Yu Illarionov et al.
NATURE ELECTRONICS (2019)
Highly concentrated and stabilizer-free transition-metal dichalcogenide dispersions in low-boiling point solvent for flexible electronics
Kenneth Lobo et al.
NANOSCALE (2019)
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
Weisheng Li et al.
NATURE ELECTRONICS (2019)
Ethylenediamine-Assisted High Yield Exfoliation of MoS2 for Flexible Solid-State Supercapacitor Application
Arup Ghorai et al.
ACS APPLIED NANO MATERIALS (2019)
Steep-slope hysteresis-free negative capacitance MoS2 transistors
Mengwei Si et al.
NATURE NANOTECHNOLOGY (2018)
MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit
Xingqiang Liu et al.
ADVANCED MATERIALS (2018)
Contact engineering for 2D materials and devices
Daniel S. Schulman et al.
CHEMICAL SOCIETY REVIEWS (2018)
Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates
Yibo Zhu et al.
NANO LETTERS (2018)
Solution-processable 2D semiconductors for high-performance large-area electronics
Zhaoyang Lin et al.
NATURE (2018)
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures
Daryl McManus et al.
NATURE NANOTECHNOLOGY (2017)
All-printed thin-film transistors from networks of liquid-exfoliated nanosheets
Adam G. Kelly et al.
SCIENCE (2017)
A sub-thermionic MoS2 FET with tunable transport
Shubhadeep Bhattacharjee et al.
APPLIED PHYSICS LETTERS (2017)
High-Mobility Multilayered MoS2 Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition
Jingying Zheng et al.
ADVANCED MATERIALS (2017)
Temperature-Dependent Performance of Printed Field-Effect Transistors with Solid Polymer Electrolyte Gating
Falk von Seggern et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability
Shubhadeep Bhattacharjee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors
Yuan Liu et al.
NANO LETTERS (2016)
Large-scale chemical assembly of atomically thin transistors and circuits
Mervin Zhao et al.
NATURE NANOTECHNOLOGY (2016)
Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors
Zeyuan Ni et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Two-dimensional semiconductors for transistors
Manish Chhowalla et al.
Nature Reviews Materials (2016)
A General Route toward Complete Room Temperature Processing of Printed and High Performance Oxide Electronics
Tessy T. Baby et al.
ACS NANO (2015)
Performance Potential and Limit of MoS2 Transistors
Xuefei Li et al.
ADVANCED MATERIALS (2015)
Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects
Hennrik Schmidt et al.
CHEMICAL SOCIETY REVIEWS (2015)
Water Dispersible, Positively and Negatively Charged MoS2 Nanosheets: Surface Chemistry and the Role of Surfactant Binding
Amit Gupta et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2015)
A subthermionic tunnel field-effect transistor with an atomically thin channel
Deblina Sarkar et al.
NATURE (2015)
Dynamic Control Over Electronic Transport in 3D Bulk Nanographene via Interfacial Charging
Subho Dasgupta et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Inkjet Printing of MoS2
Jiantong Li et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
Xuming Zou et al.
ADVANCED MATERIALS (2014)
Tailoring the Physical Properties of Molybdenum Disulfide Monolayers by Control of Interfacial Chemistry
Sina Najmaei et al.
NANO LETTERS (2014)
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Rajesh Kappera et al.
NATURE MATERIALS (2014)
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Zhihao Yu et al.
NATURE COMMUNICATIONS (2014)
Edge and confinement effects allow in situ measurement of size and thickness of liquid-exfoliated nanosheets
Claudia Backes et al.
NATURE COMMUNICATIONS (2014)
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
Stephen McDonnell et al.
ACS NANO (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Hui Fang et al.
NANO LETTERS (2013)
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Manish Chhowalla et al.
NATURE CHEMISTRY (2013)
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
Woo Jong Yu et al.
NATURE MATERIALS (2013)
Printed and Electrochemically Gated, High-Mobility, Inorganic Oxide Nanoparticle FETs and Their Suitability for High-Frequency Applications
Subho Dasgupta et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Ambipolar MoS2 Thin Flake Transistors
Yijin Zhang et al.
NANO LETTERS (2012)
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Qing Hua Wang et al.
NATURE NANOTECHNOLOGY (2012)
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Sunkook Kim et al.
NATURE COMMUNICATIONS (2012)
Large-Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions
Ronan J. Smith et al.
ADVANCED MATERIALS (2011)
Photoluminescence from Chemically Exfoliated MoS2
Goki Eda et al.
NANO LETTERS (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
Jonathan N. Coleman et al.
SCIENCE (2011)
Double layer capacitance of the platinum group metals in the double layer region
T. Pajkossy et al.
ELECTROCHEMISTRY COMMUNICATIONS (2007)
Two-dimensional atomic crystals
KS Novoselov et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2005)
Share Paper
