Thermal Conductivity of Large-Area Polycrystalline MoSe2 Films Grown by Chemical Vapor Deposition

It is of great importance to understand the thermal properties of MoSe2 films for electronic and optoelectronic applications. In this work, large-area polycrystalline MoSe2 films are prepared using a low-cost, controllable, large-scale, and repeatable chemical vapor deposition method, which facilitates direct device fabrication. Raman spectra and X-ray diffraction patterns indicate a hexagonal (2H) crystal structure of the MoSe2 film. Ellipsometric spectra analysis indicates that the optical band gap of the MoSe2 film is estimated to be similar to 1.23 eV. From the analysis of the temperature-dependent and laser-power-dependent Raman spectra, the thermal conductivity of the suspended MoSe2 films is found to be similar to 28.48 W/(m.K) at room temperature. The results can provide useful guidance for an effective thermal management of large-area polycrystalline MoSe2-based electronic and optoelectronic devices.

Automated summary

The thermal properties and optical characteristics of large-area polycrystalline MoSe2 films prepared by chemical vapor deposition have been investigated, revealing a hexagonal crystal structure and an estimated optical band gap of 1.23 eV. Thermal conductivity of the suspended MoSe2 films was found to be approximately 28.48 W/(m.K) at room temperature, providing valuable guidance for effective thermal management of electronic and optoelectronic devices based on MoSe2.