Journal
ELECTRONICS
Volume 11, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/electronics11030479
Keywords
resistive switching; thickness dependence; conductive filaments; RRAM; polarity change; hafnium oxide
Categories
Funding
- Spanish Ministry of Science, Innovation and Universities
- European Regional Development Fund project Emerging orders in quantum and nanomaterials [TK134]
- Estonian Research Agency [PRG753]
- FEDER program [TEC2017-84321-C4-1-R, TEC2017-84321-C4-2-R]
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This work observed the thickness-dependent resistive switching polarity in TiN/Ti/HfO2/Pt structures, and proposed a hypothesis on the change of polarity based on filament disruption at different interfaces.
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
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