4.8 Article

Fragile topological band in the checkerboard antiferromagnetic monolayer FeSe

Journal

NPJ COMPUTATIONAL MATERIALS
Volume 8, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41524-022-00707-9

Keywords

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Funding

  1. National Key Research and Development Program of China [2018YFA0307000]
  2. National Natural Science Foundation of China [11874022]

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By using first-principles calculations and magnetic topological quantum chemistry, this study reveals the presence of fragile topological electronic states in the antiferromagnetic monolayer FeSe, which is very close to an antiferromagnetic topological insulator with robust edge states. These fragile topological states are captured by a double-degenerate nearly flat band just below the Fermi level. The S-4z symmetry is found to protect this fragile topology, leading to a 2D second-order topological insulator that supports a bound state with fractional charge e/2 at the corner of the sample. This work provides an important platform for studying the intriguing properties of magnetic fragile topological electronic states and can explain previous observations in the checkerboard antiferromagnetic monolayer FeSe.
By means of the first-principles calculations and magnetic topological quantum chemistry, we demonstrate that the low-energy physics in the checkerboard antiferromagnetic (AFM) monolayer FeSe, very close to an AFM topological insulator that hosts robust edge states, can be well captured by a double-degenerate nearly flat band with fragile topology just below the Fermi level. The Wilson loop calculations identify that such fragile topology is protected by the S-4z symmetry, which gives rise to a 2D second-order topological insulator that supports the bound state with fractional charge e/2 at the sample corner. This work provides a platform to study the intriguing properties of magnetic fragile topological electronic states. Previous observations of the edge states and bound states in checkerboard AFM monolayer FeSe can also be well understood in our work.

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